IGBT Silicon Modules FF450R33T3E3 infineon IGBT MODULE 450A 3300V
Parametrics
FF450R33T3E3
Configuration Dual
Dimensions (length) 140.0 mm
Dimensions (width) 99.8 mm
Features Phase leg
Housing XHP 3
IC(nom) / IF(nom) 450.0 A
IC max 450.0 A
Qualification Industrial ; Traction
Technology IGBT3 - E3
VCE(sat) (Tvj=25°C typ) 2.55 V
VCES / VRRM 3300.0 V
VF (Tvj=25°C typ) 3.1 V
Voltage Class max 3300.0 V
Specifications
Product Attribute Attribute Value Search Similar
Manufacturer: Infineon
Product Category: IGBT Modules
Shipping Restrictions:
This product may require additional documentation to export from the United States.
RoHS: Details
Product: IGBT Silicon Modules
Configuration: Dual
Collector- Emitter Voltage VCEO Max: 3300 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 450 A
Gate-Emitter Leakage Current: 400 nA
Package / Case: AG-XHP100-3
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 150 C
Packaging: Tray
Series: Trenchstop IGBT3 - E3
Technology: Si
Brand: Infineon Technologies
Mounting Style: Screw Mount
Maximum Gate Emitter Voltage: 20 V
Product Type: IGBT Modules
Factory Pack Quantity: 1
Subcategory: IGBTs
Tradename: TRENCHSTOP XHP
Part # Aliases: FF450R33T3E3 SP001779538
Unit Weight: 1.543 lbs
Infineon is presenting the first XHP 3 modules for high-power applications in 3,3 kV and 450 A. The XHP 3 presents an excellent solution for demanding applications such as traction, CAV, marine and medium-voltage drives. The module allows scalable designs with best-in-class reliability and highest power density.
All XHP 3 modules have the same dimensions, 140 mm in lenght, 100 mm in width and 10 mm in height. This gives product designers the opportunity to build homogenous solutions across different current and voltage ratings in order to implement optimize power converter concepts. The first modules in XHP 3 housing are FF450R33T3E3 and FF450R33T3E3_B5.
Features
– New XHP 3 standardized housing
– CTI 600
– Fire & smoke classification acc. EN45545 R22, R23, R24: HL2
– AlSiC baseplate
– AlN substrate
– Ultrasonic welded terminals
– Symmetric internal current sharing
– Low stray inductance
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